ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,034, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Photoresist layer surface treatment, cap layer, and method of forming photoresist pattern" was invented by Yi-Chen Kuo (Taichung, Taiwan), Chih-Cheng Liu (Hsinchu, Taiwan), Ming-Hui Weng (New Taipei, Taiwan), Jia-Lin Wei (Hsinchu, Taiwan), Yen-Yu Chen (Taipei, Taiwan), Jr-Hung Li (Chupei, Taiwan), Yahru Cheng (Taipei, Taiwan), Chi-Ming Yang (Hsinchu, Taiwan), Tze-Liang Lee (Hsinchu, Taiwan) and Ching-Yu Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a pattern in a photoresist layer includes forming a ph...