ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,091, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Methods of forming semiconductor device structures" was invented by Yi-Wen Pan (New Taipei, Taiwan), You-Lan Li (Hsinchu, Taiwan) and Chung-Chi Ko (Nantou, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming an interconnect structure over a substrate. The forming the interconnect structure over the semiconductor device structure includes forming a dielectric layer, then performing an annealing process, then forming one or more op...