US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Methods for forming stacked layers and devices formed thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,047, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Methods for forming stacked layers and devices formed thereof" was invented by Shih-Yao Lin (New Taipei, Taiwan), Kuei-Yu Kao (Hsinchu, Taiwan), Chen-Ping Chen (Toucheng Township, Taiwan) and Chih-Han Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes etching a semiconductor substrate to form a trench, with the semiconductor substrate having a sidewall facing the trench, and depositing a first semiconductor layer extending into the trench. The first semiconductor layer includes a first bottom portion at a bottom of...