US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Method of forming shaped source/drain epitaxial layers of a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,752, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming shaped source/drain epitaxial layers of a semiconductor device" was invented by Yi-Jing Li (Hsinchu, Taiwan) and Ming-Hua Yu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method for manufacturing a semiconductor device, an isolation insulating layer is formed over a fin structure. A first portion of the fin structure is exposed from and a second portion of the fin structure is embedded in the isolation insulating layer. A dielectric layer is formed over sidewalls of the first portion of the fin structure....