US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Metal insulator metal capacitor structure having high capacitance" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,735, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Metal insulator metal capacitor structure having high capacitance" was invented by Chen-Yin Hsu (Tainan, Taiwan), Chun Li Wu (Tainan, Taiwan) and Ching-Hung Kao (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to a MIM dual capacitor structure with an increased capacitance per unit area in a semiconductor structure. Without using additional mask layers, a second parallel plate capacitor can be formed over a first parallel plate ca...