ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,113, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Memory structure having novel circuit routing and method for manufacturing the same" was invented by Meng-Han Lin (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan) and Yi-Ching Liu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an active structure, a memory structure, and a first conductive line. The active structure is disposed on the substrate. The memory structure is disposed over the active structure, and has a lower surface and an upper surface opposite to each other. The memory...