US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,729, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory device and manufacturing method thereof" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a word line, a dielectric layer, a gate dielectric layer, a semiconductive layer, a source line, and a memory stack. The word line is over a substrate. The dielectric layer is over the word line and has inner sidewalls over the word line. The gate dielectric layer is in contact with the word line and lines a top surface and inner sidewalls of the ...