US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,954, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magneto-resistive random-access memory (MRAM) devices with self-aligned top electrode via" was invented by Wei-Hao Liao (Taichung, Taiwan), Hsi-Wen Tien (Xinfeng Township, Taiwan), Chih-Wei Lu (Hsinchu, Taiwan), Pin-Ren Dai (New Taipei, Taiwan) and Chung-Ju Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An MRAM device includes a bottom electrode over a substrate, a magnetic tunnel junction (MTJ) structure on the bottom electrode and a top electrode on the MTJ structure. The MRAM device also includes spacers on sidewalls of t...