US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Magnetic tunnel junction device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,955, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Magnetic tunnel junction device and method of forming the same" was invented by Harry-HakLay Chuang (Zhubei, Taiwan), Hung Cho Wang (Taipei, Taiwan), Sheng-Huang Huang (Hsinchu, Taiwan), Hung-Yu Chang (Taoyuan, Taiwan) and Keng-Ming Kuo (Yunlin County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Improved methods of patterning magnetic tunnel junctions (MTJs) for magnetoresistive random-access memory (MRAM) and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes depositing a bottom electrode layer ove...