US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Integrated circuit, transistor and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,755, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit, transistor and method of fabricating the same" was invented by Yu-Wei Jiang (Hsinchu, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a gate electrode, a ferroelectric layer, a channel layer, a gas impermeable layer, a dielectric layer, a source line and a bit line. The ferroelectric layer is disposed on the gate electrode. The channel layer is disposed on the ferroelectric layer. The ga...