US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Hybrid nanostructure and fin structure device" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,763, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Hybrid nanostructure and fin structure device" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Kuo-Hua Pan (Hsinchu, Taiwan) and Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a semiconductor stack within a first region and a second region on a substrate, the semiconductor stack having alternating layers of a first type of semiconductor material and a second type of semiconductor material. The method further includes removing a portion of the semiconductor stack from the second regio...