US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Gas flow control during semiconductor fabrication" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,065, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd. (Hsin-Chu, Taiwan).

"Gas flow control during semiconductor fabrication" was invented by Yu-Liang Yeh (Kaohsiung, Taiwan), Chih-Kang Chao (Tainan, Taiwan) and Bing Kai Huang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided. The method includes introducing a process gas into an interior space of a processing chamber through a gas inlet port, wherein a substrate is supported within the interior space. The process gas is evacuated from the interior space by a vacuum source through an exhaust port in fluid communication with the interi...