US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation process" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,773, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Formation of a semiconductor device with a gate containing a metal oxide layer using an oxidation process" was invented by Chia-Wei Chen (Hsinchu, Taiwan), Jo-Chun Hung (Hsinchu, Taiwan), Chih-Wei Lee (New Taipei, Taiwan), Hui-Chi Chen (Zhudong Township, Hsinchu County, Taiwan), Hsin-Han Tsai (Hsinchu, Taiwan), Hsiang-Ju Liao (Changhua County, Taiwan), Yi-Lun Li (Taipei, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure and a formation method ar...