US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 4 for "Circuit structure with gate configuration" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,801, issued on Nov. 4, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Circuit structure with gate configuration" was invented by Ru-Shang Hsiao (Hsinchu County, Taiwan), Ying Hsin Lu (Tainan, Taiwan), Ching-Hwanq Su (Tainan, Taiwan), Pin Chia Su (Tainan County, Taiwan) and Ling-Sung Wang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor structure in accordance with some embodiment. The semiconductor structure includes a semiconductor substrate having a first circuit region and a second circuit region; active regions extended from the semiconductor substrate ...