US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 4 for "Buried gate structures for semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,772, issued on Nov. 4, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Buried gate structures for semiconductor devices" was invented by Hsaio-Chun Chang (Hsinchu County, Taiwan) and Guan-Jie Shen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device having a buried gate structure. The semiconductor device includes a substrate and a fin structure on the substrate. The fin structure includes a top portion and a bottom portion. The semiconductor device further includes a gate structure on the bottom portion of the fin structure. Multiple semiconductor laye...