US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Tuning threshold voltage in field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,277, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Tuning threshold voltage in field-effect transistors" was invented by Hsueh Wen Tsau (Miaoli County, Taiwan), Ziwei Fang (Hsinchu, Taiwan), Huang-Lin Chao (Hsinchu, Taiwan) and Kuo-Liang Sung (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an interfacial layer disposed over a semiconductor channel region, a metal oxide layer disposed over the interfacial layer, a high-k gate dielectric layer disposed over the metal oxide layer, a metal halide layer disposed over the high-k gate dielectric la...