US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Testing structure for an integrated chip having a high-voltage device" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,698, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Testing structure for an integrated chip having a high-voltage device" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Wei Cheng Wu (Zhubei, Taiwan), Chung-Jen Huang (Tainan, Taiwan), Wen-Tuo Huang (Tainan, Taiwan), Ya-Chi Hung (Kaohsiung, Taiwan) and Chia-Sheng Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a first deep trench isolation (DTI) structure in a substrate. A dielectric structure is over the substrate. ...