US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Techniques for semiconductor gate and contact formation to reduce seam formation" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,274, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Techniques for semiconductor gate and contact formation to reduce seam formation" was invented by Hsin-Han Tsai (Hsinchu, Taiwan), Hsiang-Ju Liao (Hsinchu, Taiwan), Yi-Lun Li (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan), Weng Chang (Hsin-Chu, Taiwan), Chi On Chui (Hsinchu, Taiwan), Jo-Chun Hung (Hsinchu, Taiwan), Chih-Wei Lee (New Taipei, Taiwan) and Chia-Wei Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Ruthenium of a metal gate (MG) and/or a middle end of line (MEOL) structure is annealed to reduce, or even elimina...