US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Silicide-layer-coupled doped portion of active region and method of fabricating same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,280, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Silicide-layer-coupled doped portion of active region and method of fabricating same" was invented by Chung-Hui Chen (Hsinchu, Taiwan), Tung-Tsun Chen (Hsinchu, Taiwan) and Jui-Cheng Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first arrangement including first and second silicide layers correspondingly electrically coupled to opposing first and second sides of a doped first portion of an active region; and a second arrangement including a third silicide layer electrically coupled to ...