US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Semiconductor structure with backside power mesh and method of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,301, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsin-Chu, Taiwan).

"Semiconductor structure with backside power mesh and method of forming the same" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a doped region extending in a first direction on a substrate; depositing a gate electrode over the substrate and extending in a second direction; and forming a source/drain region on one side of the doped region; forming a first power rail over an upper surface of the source/drain region, the first power rail extending in the first direct...