ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,293, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor devices and methods of manufacture" was invented by Yu-Lien Huang (Jhubei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various semiconductor techniques described herein enable reductions in one or more sizes of a fin field-effect transistor (finFET) and/or increasing one or more sizes of a finFET. In various implementations described herein, a material may be used to reduce the one or more x-direction sizes of the finFET by selective deposition while enabling the one or more y-direction sizes of the finFET to be increased o...