US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,310, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Kai-Fang Cheng (Taoyuan, Taiwan), Kuang-Wei Yang (Hsinchu, Taiwan), Cherng-Shiaw Tsai (New Taipei, Taiwan) and Hsiaokang Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interfacial structure, along with methods of forming such, are described. The structure includes a first interfacial layer having a first dielectric layer, a first conductive feature disposed in the first dielectric layer, and a first thermal conductive layer disposed on the...