US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Semiconductor device having thermally conductive air gap structure and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,703, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having thermally conductive air gap structure and method for manufacturing the same" was invented by Ting-Ya Lo (Hsinchu, Taiwan), Shao-Kuan Lee (Hsinchu, Taiwan), Chi-Lin Teng (Hsinchu, Taiwan), Cherng-Shiaw Tsai (Hsinchu, Taiwan), Cheng-Chin Lee (Hsinchu, Taiwan), Kuang-Wei Yang (Hsinchu, Taiwan), Hsin-Yen Huang (Hsinchu, Taiwan), Hsiao-Kang Chang (Hsinchu, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes preparing an elec...