ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,240, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and methods of forming the same" was invented by Tien-Shun Chang (New Taipei, Taiwan), Kuo-Ju Chen (Taichung, Taiwan), Su-Hao Liu (Jhongpu Township, Taiwan), Huicheng Chang (Tainan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a first dummy gate structure over a first region of a substrate and a second dummy gate structure over a second region of the substrate, the first region and the second region of the substrate having a...