ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,459, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Planarization-less phase change material switch" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Chia Wen Liang (Zhubei, Taiwan), Chang-Chih Huang (Taichung, Taiwan), Han-Yu Chen (Zhubei, Taiwan), Kuo-Chyuan Tzeng (Chu-Pei, Taiwan) and Tsung-Hao Yeh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A dielectric isolation layer having a top surface may be formed over a substrate. A heater line, a phase change material (PCM) line, and an in-process conductive barrier plate may be formed over the dielectric isolation layer. An el...