US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Physical vapor deposition apparatus" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,204, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Physical vapor deposition apparatus" was invented by Kuo-Lung Huo (Hsinchu, Taiwan), Wei-Chen Liao (Hsinchu, Taiwan) and Ming-Hsien Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities i...