US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Multigate device structure with engineered gate" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,251, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD (Hsinchu, Taiwan).

"Multigate device structure with engineered gate" was invented by Hsiao-Chun Chang (Hsinchu County, Taiwan) and Guan-Jie Shen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a fin region formed on a substrate, wherein the fin region includes multiple channels vertically stacked on the substrate; a gate stack disposed on the fin region, wherein the gate stack is wrapping around each of the multiple channels and include...