US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Method of manufacturing a semiconductor device including forming a sidewall spacer on a sidewall of a channel structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,246, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a semiconductor device including forming a sidewall spacer on a sidewall of a channel structure" was invented by Shih-Cheng Chen (New Taipei, Taiwan), Zhi-Chang Lin (Hsinchu County, Taiwan), Jung-Hung Chang (Changhua County, Taiwan), Chien Ning Yao (Hsinchu, Taiwan), Tsung-Han Chuang (Tainan, Taiwan), Kai-Lin Chuang (Chiayi, Taiwan) and Kuo-Cheng Chiang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a channel layer, a gate structure, a first source/drain epitaxial structure, a s...