US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Method of forming gate structures for nanostructures" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,257, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Method of forming gate structures for nanostructures" was invented by Chunchieh Wang (Kaohsiung, Taiwan) and Yueh-Ching Pai (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment includes a device having a first set of nanostructures on a substrate, the first set of nanostructures including a first channel region, a second set of nanostructures on the substrate, the second set of nanostructures including a second channel region, a gate dielectric layer wrapping around each of the first and second sets of nanostructures, a fi...