US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,295, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method (and related apparatus) for forming a semiconductor device with reduced spacing between nanostructure field-effect transistors" was invented by Zhi-Chang Lin (Zhubei, Taiwan), Huan-Chieh Su (Tianzhong Township, Taiwan) and Kuo-Cheng Chiang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a semiconductor fin projecting from a substrate. Semiconductor nanostructures are disposed over the semiconductor fin....