US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Metal features of a semiconductor device and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,253, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Metal features of a semiconductor device and methods for forming the same" was invented by Kuan-Kan Hu (Hsinchu, Taiwan), Tsung-Kai Chiu (Hsinchu County, Taiwan), Wei-Yen Woon (Taoyuan, Taiwan), Szuya Liao (Zubei Hsinchu, Taiwan) and Ku-Feng Yang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method is provided that includes depositing a catalyst layer along a surface of the opening and performing a selectivity enhancement process. The selectivity enhancement process alters a deposition rate of a metal component on at...