ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,479,719, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"MEMS structure" was invented by Fan Hu (Taipei, Taiwan), Wen-Chuan Tai (Hsinchu, Taiwan), Li-Chun Peng (Hsin-Chu, Taiwan) and Hsiang-Fu Chen (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A MEMS package is provided. The MEMS package includes a metallization layer, a planarization structure, a MEMS device structure, a cap structure and a pressure adjustment element. The planarization structure has an inner sidewall defining a first cavity exposing the metallization layer. The MEMS device structure is bonded to the planar...