US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,229, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of forming the same" was invented by Yu-Wei Jiang (Hsinchu, Taiwan), Pin-Cheng Hsu (Hsinchu County, Taiwan), Feng-Cheng Yang (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a multi-layer stack, a channel layer, a memory material layer and at least three conductive pillars. The multi-layer stack is disposed on a substrate and includes a plurality of conductive layers and a plurality of dielectric layers stacked alternately. The channel layer a...