US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Interconnect structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,743, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interconnect structure and method for forming the same" was invented by Hsin-Yen Huang (New Taipei, Taiwan), Shao-Kuan Lee (Kaohsiung, Taiwan), Cheng-Chin Lee (Taipei, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure is provided. The interconnect structure includes a first metal line and a second metal line in a first dielectric layer, a catalyst layer on the first dielectric layer, a dielectric block on the catalyst layer, an etching stop layer al...