US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Integrated circuit structure with gate structures on grids and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,299, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Integrated circuit structure with gate structures on grids and method for forming the same" was invented by Yung Feng Chang (Hsinchu, Taiwan), Tung-Heng Hsieh (Hsinchu County, Taiwan), Bao-Ru Young (Hsinchu County, Taiwan) and Pi-Yun Sun (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The integrated circuit (IC) structure includes a semiconductor substrate, a first active region, a dummy fill region, a second active region, first metal gate structures, and second metal gate structures. The first active region is on the semicond...