US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Integrated circuit, transistor and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,282, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit, transistor and method of fabricating the same" was invented by Yi-Cheng Chu (Chiayi, Taiwan), Tzu-Hsiang Hsu (Hsinchu County, Taiwan), Pin-Cheng Hsu (Hsinchu County, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a gate electrode, a gate dielectric, a channel layer and a source line and bit line. The gate electrode includes a first gate material layer and a second gate material layer disposed on the first gate material layer, wherein a work function of the first gat...