US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Gate structures in transistors and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,249, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gate structures in transistors and method of forming same" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include a device and method of forming a device, such as a nano-FET transistor, including a first nanostructure. A gate dielectric is formed around the first nanostructure. A gate electrode is formed over the gate dielectric, and the gate electrode includes a first work function metal. In the gate electrode, a first met...