US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Gas flow accelerator to prevent buildup of processing byproduct in a main pumping line of a semiconductor processing tool" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,671, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Gas flow accelerator to prevent buildup of processing byproduct in a main pumping line of a semiconductor processing tool" was invented by Sheng-chun Yang (Tainan, Taiwan), Chih-Lung Cheng (Tainan, Taiwan), Yi-Ming Lin (Tainan, Taiwan), Po-Chih Huang (Tainan, Taiwan), Yu-Hsiang Juan (Taichung, Taiwan) and Xuan-Yang Zheng (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator m...