US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Ferroelectric memory device and method of fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,232, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Ferroelectric memory device and method of fabricating the same" was invented by Tzu-Yu Lin (Taoyuan, Taiwan) and Yao-Wen Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a semiconductor device having a ferroelectric memory with improved retention after cycling (RAC) memory window (MW) performance. The semiconductor device includes an interconnect structure on a substrate, a first electrode on the interconnect structure, a ferroelectric layer on the first electrode, and a second electrode on ...