US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Embedded flash memory device with floating gate embedded in a substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,217, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Embedded flash memory device with floating gate embedded in a substrate" was invented by Wei Cheng Wu (Zhubei, Taiwan) and Harry-Hak-Lay Chuang (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embedded flash memory device includes a gate stack, which includes a bottom dielectric layer extending into a recess in a semiconductor substrate, and a charge storage layer over the bottom dielectric layer. The charge storage layer includes a portion in the recess. The gate stack further includes a top dielectric layer over the charge stor...