US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Conductive features of semiconductor devices and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,658, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Conductive features of semiconductor devices and methods of forming the same" was invented by Yu Shan Lee (Taichung, Taiwan), Fa-Wei Huang (Taichung, Taiwan) and Yu-Shao Cheng (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a first layer over a substrate in a deposition chamber with a first deposition cycle and forming a second layer over the substrate in the deposition chamber with a second deposition cycle. The first deposition cycle includes flowing a first process gas o...