US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 25 for "Conductive feature formation and structure using bottom-up filling deposition" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,705, issued on Nov. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Conductive feature formation and structure using bottom-up filling deposition" was invented by Pin-Wen Chen (Keelung, Taiwan), Chia-Han Lai (Zhubei, Taiwan), Chih-Wei Chang (Hsinchu, Taiwan), Mei-Hui Fu (Hsinchu, Taiwan), Ming-Hsing Tsai (Chu-Pei, Taiwan), Wei-Jung Lin (Hsinchu, Taiwan), Yu-Shih Wang (Tainan, Taiwan), Ya-Yi Cheng (Taichung, Taiwan) and I-Li Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, et...