US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 25 for "Absorption enhancement structure to increase quantum efficiency of image sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,325, issued on Nov. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Absorption enhancement structure to increase quantum efficiency of image sensor" was invented by Tsun-Kai Tsao (Tainan, Taiwan), Cheng-Hsien Chou (Tainan, Taiwan) and Jiech-Fun Lu (Madou Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a mask layer on a first side of a semiconductor substrate. The mask layer comprises a plurality of sidewalls defining a plurality of openings. A first etch process is...