US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Three-dimensional memory device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,744, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional memory device and manufacturing method thereof" was invented by Sheng-Chen Wang (Hsinchu, Taiwan), Meng-Han Lin (Hsinchu, Taiwan), Sai-Hooi Yeong (Hsinchu County, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Han-Jong Chia (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first stacking structure, a second stacking structure, a plurality of first isolation structures, gate dielectric layers, channel layers and conductive pillars. The first stacking structure includes a plurality of first gate...