US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Structure of isolation feature of semiconductor device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,802, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Structure of isolation feature of semiconductor device structure" was invented by Kuo-Cheng Ching (Zhubei, Taiwan), Shi-Ning Ju (Hsinchu, Taiwan), Kuan-Ting Pan (Taipei, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a fin structure over a semiconductor substrate and a dummy gate stack formed over the fin structure and having a first sidewall and an opposite second sidewall. The semiconductor device s...