US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Semiconductor transistor device structure including nanostructure and gate structure with protection layer and fill layer and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,766, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor transistor device structure including nanostructure and gate structure with protection layer and fill layer and method for forming the same" was invented by Mao-Lin Huang (Hsinchu, Taiwan), Lung-Kun Chu (New Taipei, Taiwan), Chung-Wei Hsu (Hsinchu County, Taiwan), Jia-Ni Yu (New Taipei, Taiwan), Chun-Fu Lu (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provid...