US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Semiconductor device having multi-layer epitaxial structures with different lattice constants" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,808, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having multi-layer epitaxial structures with different lattice constants" was invented by Yee-Chia Yeo (Hsinchu, Taiwan), Sung-Li Wang (Zhubei, Taiwan), Chi On Chui (Hsinchu, Taiwan), Jyh-Cherng Sheu (Hsinchu, Taiwan), Hung-Li Chiang (Taipei, Taiwan) and I-Sheng Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a field effect transistor (FET). The FET includes a first channel, a first source and a first drain; a second channel, a second source and a second drain; and a gate...