US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Semiconductor device and methods of formation" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,795, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and methods of formation" was invented by Shahaji B. More (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some implementations described herein include a semiconductor device including a gate-all-around transistor. The gate-all-around transistor includes a source/drain region having a core epitaxial layer and a capping epitaxial layer. The core epitaxial layer is formed within the source/drain region using a deposition recipe having a temperature that is lesser relative to temperatures of other deposition recip...