US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 18 for "Semiconductor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,767, issued on Nov. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Bo-Feng Young (Taipei, Taiwan), Po-Chi Wu (Zhubei, Taiwan) and Che-Cheng Chang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing process and device are provided in which a first opening in formed within a substrate. The first opening is reshaped into a second opening using a second etching process. The second etching process is performed with a radical etch in which neutral ions are utilized. As such, substrate push is reduced."

The patent was filed on Sept. 25, 202...