US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 18 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,113, issued on Nov. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Chih-Hung Hsieh (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes first and second FETs including first and second channel regions, respectively. The first and second FETs include first and second gate structures, respectively. The first and second gate structures include first and second gate dielectric layers formed over the first and second channel regions and first and second gate electrode layers formed over the first and s...